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| BAR 63-03W Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63-03W Marking G Ordering Code (tape and reel) Q62702-A1025 Pin Configuration Package 1 2 A C SOD-323 1) Maximum Ratings Parameter Reverse voltage Forward current Total Power dissipation TS 111C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient 1) Symbol BAR 63-03W 50 100 250 -55 +150C -55...+150C Unit V mA mW C C VR IF Ptot Top Tstg Junction-soldering point Rth JA Rth JS 235 155 K/W K/W _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 22.07.94 BAR 63-03W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC Characteristics Breakdown voltage IR = 5 A Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance V(BR) 50 0.95 0.3 0.21 1.2 1 75 2.0 - V nA 50 V 1.2 pF pF 0.3 2 ns nH - IR VF CT CT rf L Ls Semiconductor Group 2 Edition A01, 22.07.94 BAR 63-03W Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Forward current IF = f (TA*TS) mA T IF S S T A TT A S Semiconductor Group 3 Edition A01, 22.07.94 BAR 63-03W Permissible load RthJS = f (tp) K/W Permissible load IFmax / IFDC = f (tp) IF max _______ I DC F R thJS tp tp Semiconductor Group 4 Edition A01, 22.07.94 |
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